Mapping of EL2-Related Luminescence on Semi-Insulating GaAs Wafers at Room Temperature : Semiconductors and Semiconductors Devices
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概要
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Deep-level photoluminescence(PL) at room temperature has been used to determine the two-dimensional distribution of the dominant midgap donor EL2 in undoped semi-insulating GaAs crystals grown by the liquid encapsulated Czochralski method. Various fourfold symmetric patterns have been observed in PL maps of the EL2-related band or conventional (100) wafers. The patterns correlate closely with the EL2 distributions reported previously using optical absorption spectroscopy, but not with the patterns for the band-edge PL. A PL mapping under a high spatial resolution reveals a cellular structure in a highly dislocated area in the central part of the wafers.
- 社団法人応用物理学会の論文
- 1988-07-20
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