Photoluminescence Analysis of 'New Donors' in Silicon
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概要
- 論文の詳細を見る
An anneal around 650℃ for a long duration introduces a new type of donors (new donors)in CZ-Si crystals. We have investigated the properties of the new donors by the photoluminescence method for the first time. The introduction of the characteristic broad bands (C-type pattern) in the PL spectra shows one to one correspondence with the generation of the new donors defined by the resistivity measurements. The appearance of the C-type spectra is enhanced by the presence of a high concentration of carbon (≳5×10^<16>cm^<-3>) and/or the preanneal at 470℃.
- 社団法人応用物理学会の論文
- 1980-12-05
著者
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Tajima Michio
Electrotechnical Laboratory
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Iizuka Takashi
Cooperative Laboratories Vlsi Technology Research Association:(present) Electrotechnical Laboratory
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Kishino Seigo
Cooperative Laboratories Vlsi Technology Research Association:(present Address) Musashi Works Of Hit
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Kishino Seigo
Cooperative Laboratories Vlsi Technology Research Association:(present) Central Research Laboratory
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Kishino Seigo
Cooperative Laboratories Vlsi Technology Research Association
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KANAMORI Akihiro
Cooperative Laboratories, VLSI Technology Research Association
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Iizuka Takashi
Cooperative Laboratories Vlsi Technology Research Association
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Kanamori Akihiro
Cooperative Laboratories Vlsi Technology Research Association:(present) Hirosaki University
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