A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials
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概要
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Thermally induced microdefects in Czochralski-grown (CZ) silicon crystals have been investigated by both TEM and IR absorption techniques. Dependence of the defect behavior on both the annealing temperature and the starting materials was studied. It was found that the defect nature varies with the temperature, and that the defect density increases exponentially with the decrease of the annealing temperature. The increase in density also has a strong correlation with the initial carbon concentration in the wafer. It is concluded that the oxygen precipitates are heterogeneously formed at sites which have certain correlation with carbon atoms.
- 社団法人応用物理学会の論文
- 1980-02-05
著者
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Kishino Seigo
Cooperative Laboratories Vlsi Technology Research Association:(present Address) Musashi Works Of Hit
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Kishino Seigo
Cooperative Laboratories Vlsi Technology Research Association
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Matsushita Yoshiaki
Cooperative Laboratories Vlsi Technology Research Association
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KANAMORI Masaru
Cooperative Laboratories, VLSI Technology Research Association
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Kanamori Masaru
Cooperative Laboratories Vlsi Technology Research Association
関連論文
- Photoluminescence Analysis of 'New Donors' in Silicon
- Photoluminescence Analysis of Annealed Silicon Crystals
- Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers
- A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials
- The Enhancement of Anomalously Transmitted X-Ray Intensity by Asymmetric Diffraction and Its Application to Si Wafer Evaluation
- Thermally Induced Microdefects in Czochralski-Grown Silicon : Nucleation and Growth Behavior