Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers
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概要
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The ability of an intrinsic gettering (IG) using microdefects in Czochralski silicon wafers is verified on copper diffused wafers with the help of a neutron activation analysis (NAA). The IG technique used here is an improved double preannealing technique. It is ascertained that the copper concentration is enhanced in the bulk region where a high density of microdefects were induced. Moreover, the concentration in the denuded zone near the surface is proved to be below the detection limit of the NAA technique.
- 1980-08-05
著者
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Kishino Seigo
Cooperative Laboratories Vlsi Technology Research Association
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Iizuka Takashi
Cooperative Laboratories Vlsi Technology Research Association
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NAGASAWA Kazutoshi
Cooperative Laboratories, VLSI Technology Research Association
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Nagasawa Kazutoshi
Cooperative Laboratories Vlsi Technology Research Association
関連論文
- Photoluminescence Analysis of 'New Donors' in Silicon
- Photoluminescence Analysis of Annealed Silicon Crystals
- Photoluminescence Spectra of Thermal Donors in Silicon
- Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers
- A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials
- The Enhancement of Anomalously Transmitted X-Ray Intensity by Asymmetric Diffraction and Its Application to Si Wafer Evaluation
- Thermally Induced Microdefects in Czochralski-Grown Silicon : Nucleation and Growth Behavior