Thermally Induced Microdefects in Czochralski-Grown Silicon : Nucleation and Growth Behavior

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概要

• 論文の詳細を見る

• The current understanding of thermally induced microdefects in Czochralski-grown silicon crystals is briefly reviewed and our investigations of the defects are described. The microdefects originate in oxygen precipitation occurring during thermal treatments after crystal growth. Both homogeneous and heterogeneous nucleation models have been proposed for the oxygen precipitation. The homogeneous nucleation model is contradicted because a low density of microdefects are induced in recent high-quality crystals even at high oxygen concentrations. A heterogeneous nucleation model is proposed, based on detailed investigations of the thermal behaviors of microdefects. It is demonstrated that the oxygen precipitation is governed by nucleation sites (carbon atoms) and the thermal history of wafers after crystal growth besides the oxygen concentration of the wafer.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• Kishino Seigo

  Cooperative Laboratories Vlsi Technology Research Association

• Matsushita Yoshiaki

  Cooperative Laboratories Vlsi Technology Research Association

• Iizuka Takashi

  Cooperative Laboratories Vlsi Technology Research Association

• Kanamori Masaru

  Cooperative Laboratories Vlsi Technology Research Association

• MATSUSHITA Yoshiaki

  Cooperative Laboratories, VLSI Technology Research Association :(Present address) Research & Development Center, Toshiba Co.

• IIZUKA Takashi

  Cooperative Laboratories, VLSI Technology Research Association:(Present address) Electrotechnical Laboratory

• KISHINO Seigo

  Cooperative Laboratories, VLSI Technology Research Association:(Present address) Musashi Works of Hitachi Ltd.

• KANAMORI Masaru

  Cooperative Laboratories, VLSI Technology Research Association:(Present address) Centeral Research Laboratory, Nippon Electric Co., Ltd.

関連論文

• Photoluminescence Analysis of 'New Donors' in Silicon
• Photoluminescence Analysis of Annealed Silicon Crystals
• Photoluminescence Spectra of Thermal Donors in Silicon
• Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers
• A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials
• The Enhancement of Anomalously Transmitted X-Ray Intensity by Asymmetric Diffraction and Its Application to Si Wafer Evaluation
• Thermally Induced Microdefects in Czochralski-Grown Silicon : Nucleation and Growth Behavior

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