Temperature Dependence of Electron-Beam-Induced Current Image of Semi-Insulating Undoped Liquid-Encapsulated Czochralski GaAs

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概要

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• Semi-insulating undoped liquid-encapsulated Czochralski GaAs was investigated by the electron-beam-induced current method. It is found that defects which cannot be observed at room temperature become visible when the temperature is raised to about 350 K. A simple theoretical consideration on this experimental result was performed.

• 社団法人応用物理学会の論文
• 1991-11-15

著者

• Tokumaru Y

  Chuo Univ. Tokyo Jpn

• Tokumaru Yozo

  Chuo University

関連論文

• Temperature Dependence of Electron-Beam-Induced Current Image of Semi-Insulating Undoped Liquid-Encapsulated Czochralski GaAs
• Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films"

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