Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-08-10
著者
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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NAKAJIMA Anri
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima A
Research Center For Nanodevices And Systems Hiroshima University
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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Nomura Akihiro
Research Center For Nanodevices And Systems Hiroshima University
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ISHII Hiroyuki
Research Center for Nanodevices and Systems, Hiroshima University
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Ishii Hiroyuki
Research Center For Nanodevices And Systems Hiroshima University
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