Silicon Single-Electron Memory Having in-Plane Dot with Double Gates
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概要
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We fabricated a Si single-electron memory having an in-plane dot with two gates (back and side gates), where the in-plane dot acts as a floating dot. In this structure, a large transconductance can be obtained while keeping the gate leakage current between the floating dot and gates small. Single-electron transfer into the floating dot from the channel was confirmed at 4.2 K using both the back and side gates. Transconductances for the back and side gate voltages of $2.0\times 10^{-8}$ and $1.2\times 10^{-9}$ S respectively were obtained. Therefore, a 17-fold larger transconductance for the back gate voltage than for the side gate voltage was realized. This leads to an extremely low power consumption with a reliable memory operation.
- 2008-06-25
著者
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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OHKURA Kensaku
Research Center for Nanodevices and Systems (RCNS), Hiroshima University
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Ohkura Kensaku
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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Fujiaki Tomo
Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan
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