Mobility and Number Fluctuations in MOS Structures
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概要
- 論文の詳細を見る
It is demonstrated that the mobility and number fluctuations in an n-channel metal oxide semiconductor field effect transistor (n-MOSFET), which has a shallow-doped channel, can be separately measured. The mobility fluctuation becomes the dominant source of noise in the case where a negative gate voltage is applied. This is because carriers are not near the Si/SiO interface. If a positive gate voltage is applied to the MOSFET, carriers exist near the Si/SiO interface, so that noise due to the number fluctuation becomes dominant.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Wada Masanori
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Tabei Tetsuo
Research Center For Nanodevices And Systems (rcns) Hiroshima University
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HAMAYOSHI Shinichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAKAMOTO Takayuki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHKURA Kensaku
Research Center for Nanodevices and Systems (RCNS), Hiroshima University
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IKEDA Mitsuhisa
Research Center for Nanodevices and Systems (RCNS), Hiroshima University
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Higuchi Katsuhiko
Graduate School Of Advanced Science Of Matter Hiroshima University
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Ohkura Kensaku
Research Center for Nanodevices and Systems (RCNS), Hiroshima University, Higashi-Hiroshima 739-8527, Japan
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Ikeda Mitsuhisa
Research Center for Nanodevices and Systems (RCNS), Hiroshima University, Higashi-Hiroshima 739-8527, Japan
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Tabei Tetsuo
Research Center for Nanodevices and Systems (RCNS), Hiroshima University, Higashi-Hiroshima 739-8527, Japan
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