Fabrication of High-Density Diamond Nanotips by Electron Beam Lithography

概要

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For application to fabricating of diamond field emitters, nanosize hard masks for forming high-density diamond nanotips were produced on polycrystalline diamond wafers by electron beam lithography. Fabricated hard masks are of two kinds: one is a TiN–Al stack mask, which forms a uniquely shaped diamond tip after etching because of the difference in etching characteristics between TiN and Al, and the other is an amorphous Si mask, which replaces the conventional Al mask in order to form much smaller diamond tips. These hard masks were arrayed on a diamond wafer at a pitch of 200 or 300 nm. The diameters of a TiN–Al stack mask and of an amorphous Si mask are 100–110 nm and 70–80 nm, respectively. The density of diamond nanotips fabricated using hard masks is 25 pieces per μm2 (200 nm pitch), and the dispersion in diamond tip height is 5% or less.
2006-03-15