Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
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概要
- 論文の詳細を見る
- 2010-08-25
著者
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SAITOH Yu
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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SUMIYOSHI Kazuhide
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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OKADA Masaya
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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HORII Taku
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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MIYAZAKI Tomihito
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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SHIOMI Hiromu
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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UENO Masaki
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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KATAYAMA Koji
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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KIYAMA Makoto
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NAKAMURA Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Saitoh Yu
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Horii Taku
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kiyama Makoto
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Shiomi Hiromu
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Katayama Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Okada Masaya
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Miyazaki Tomihito
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Sumiyoshi Kazuhide
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Miyazaki Tomihito
Semiconductor R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Kiyama Makoto
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
関連論文
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
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- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs