Nakamura Takao | Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.

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著作論文

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ GaN Substrates
Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates
Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs

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