HIRAYAMA Hideki | RIKEN (The Institute of Physical and Chemical Research)
スポンサーリンク
概要
関連著者
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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KAMATA Norihiko
Saitama University
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NAKAMURA Takao
Sumitomo Electric Industries, Ltd.
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FUJIKAWA Sachie
RIKEN
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Kondo Yukihiro
Matsushita Electric Works Ltd.
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NOGUCHI Norimichi
RIKEN (The Institute of Physical and Chemical Research)
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AKITA Katsushi
Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories
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YATABE Tohru
RIKEN (The Institute of Physical and Chemical Research)
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TAKANO Takayoshi
RIKEN
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Hirayama Hideki
Riken:jst Crest
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Akita Kimiya
Department Of Electrical And Electronic Engineering Muroran Institute Of Technology
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Takano Takayoshi
Riken:matsushita Electric Works Ltd.
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Akita Katsushi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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YATABE Tohru
Saitama University
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NOGUCHI Norimichi
Saitama University
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ISHIBASHI Koji
RIKEN, Frontier Research Program
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KONDO Yukihiro
RIKEN (The institute of Physical and Chemical Research)
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TSUKADA Yusuke
RIKEN (The Institute of Physical and Chemical Research)
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MAEDA Tetsutoshi
RIKEN (The Institute of Physical and Chemical Research)
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KYONO Takashi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories
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Ishibashi Koji
Riken Saitama Jpn
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Kyono Takashi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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Takano Takayoshi
Matsushita Electric Works, Ltd., 1048 Kadoma, Kadoma, Osaka 571-8686, Japan
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Akita Katsushi
Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Ying Leiying
RIKEN Sendai, 519-1399 Aramaki Aoba, Aoba-ku, Sendai 980-0845, Japan
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Horiuchi-Ikeda Noriaki
RIKEN Sendai, 519-1399 Aramaki Aoba, Aoba-ku, Sendai 980-0845, Japan
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平山 秀樹
RIKEN
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谷田部 透
Saitama University
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野口 憲道
Saitama University
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鎌田 憲彦
Saitama University
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Fujikawa Sachie
RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Ishibashi Koji
RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
著作論文
- 227nm AlGaN Light-Emitting Diode with 0.15mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
- 227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire
- Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
- Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
- Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- 284-300nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates
- 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser
- Realization of 340-nm-Band High-Output-Power (${>}7$ mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes