Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
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概要
- 論文の詳細を見る
We fabricated InAlGaN quaternary ultraviolet (UV)-light-emitting diodes (LEDs) on GaN substrates with a low dislocation density and on GaN templates consisting of n-GaN on sapphire substrates, and compared the characteristics of these LEDs. A UV LED on a GaN substrate showed a considerably higher output power than that on a GaN template and no saturation even at an injection current of 500 mA. Cathodeluminescence images indicated the advantages of using GaN substrates in InAlGaN UV LEDs.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-12-15
著者
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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NAKAMURA Takao
Sumitomo Electric Industries, Ltd.
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Akita Katsushi
Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Akita Katsushi
Sumitomo Electric Industries, Ltd. Semiconductor R&D Laboratories, 1-1-1 Koyakita, Itami, Hyogo 664-0016, Japan
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