Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Kondo Yukihiro
Matsushita Electric Works Ltd.
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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FUJIKAWA Sachie
RIKEN
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TAKANO Takayoshi
RIKEN
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KONDO Yukihiro
RIKEN (The institute of Physical and Chemical Research)
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Hirayama Hideki
Riken:jst Crest
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Takano Takayoshi
Riken:matsushita Electric Works Ltd.
関連論文
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- 227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire
- Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
- Realization of 340-nm-band high-output-power (>7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN (Special issue: Solid state devices and materials)
- Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
- Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- 284-300nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates
- 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser
- Realization of 340-nm-Band High-Output-Power (${>}7$ mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes