Realization of 340-nm-band high-output-power (>7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN (Special issue: Solid state devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
- Realization of 340-nm-band high-output-power (>7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN (Special issue: Solid state devices and materials)
- Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
- Realization of 340-nm-Band High-Output-Power (${>}7$ mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN