Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
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概要
- 論文の詳細を見る
High output power 340 nm-band InAlGaN-based multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) were achieved by using p-type InAlGaN layers. The output power of a UV-LED with p-type InAIGaN layers was approximately 4.7 times larger than that achieved with p-type AlGaN layers. We obtained an output power of 8.4mW from a 346 nm InAlGaN-QW LED by optimizing the band line-up to suppress electron overflow and by reducing the threading dislocation density (TDD) of the AlN/AlGaN template.
- 社団法人照明学会の論文
著者
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Kondo Yukihiro
Matsushita Electric Works Ltd.
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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FUJIKAWA Sachie
RIKEN
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TAKANO Takayoshi
RIKEN
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Hirayama Hideki
Riken:jst Crest
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Takano Takayoshi
Riken:matsushita Electric Works Ltd.
関連論文
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