Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser

概要

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In the development of high-performance terahertz quantum cascade lasers (THz-QCLs), the use of a Ag double-metal waveguide (DMW) is attractive because it has low propagation-loss and high thermal conductivity. In this study, we investigated the Ag–metal bonding conditions for the DMW of THz-QCL. GaAs wafers were bonded together with Ag–metal layers by applying high-pressure and heat. We achieved successful Ag bonding at 400 °C with an applied pressure of 38.5 kg/cm2 for 30 min in N2 ambient. A thin Ti adhesion layer was inserted between Ag and GaAs. The Ti layer (thickness $\geq$ 10 nm) was, in addition, found to act as a barrier preventing Ag diffusion into GaAs at temperatures below 400 °C.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-10-25