222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
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概要
- 論文の詳細を見る
We demonstrated a 222 nm deep-ultraviolet (DUV) AlGaN multi-quantum well (MQW) light-emitting diode (LED) fabricated on a high-quality AlN buffer layer grown on a sapphire substrate, which is the shortest wavelength AlGaN LED ever reported. The maximum output power and the external quantum efficiency of the 222 nm AlGaN LED were 14 μW and 0.003%, respectively, under pulsed current injection. We also investigated the radiation angle dependence of a series of 222--253 nm AlGaN QW DUV LEDs, and demonstrated that vertical $c$-axis emission can be obtained even when the Al composition of the AlGaN QW is as high as 83%.
- Japan Society of Applied Physicsの論文
- 2010-03-25
著者
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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NOGUCHI Norimichi
RIKEN (The Institute of Physical and Chemical Research)
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KAMATA Norihiko
Saitama University
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