Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-03-25
著者
-
HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
-
KAMATA Norihiko
Saitama University
-
TSUKADA Yusuke
RIKEN (The Institute of Physical and Chemical Research)
-
MAEDA Tetsutoshi
RIKEN (The Institute of Physical and Chemical Research)
関連論文
- 227nm AlGaN Light-Emitting Diode with 0.15mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
- 227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire
- Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
- Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
- Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Improvement in Durability of Red Phosphor Encapsulated by Sol-Gel Glass for Use in White Light-Emitting Diodes
- 284-300nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates
- 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
- Beyond the Border between Hardware and Software
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser
- Realization of 340-nm-Band High-Output-Power (${>}7$ mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes