227nm AlGaN Light-Emitting Diode with 0.15mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
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HIRAYAMA Hideki
RIKEN (The Institute of Physical and Chemical Research)
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NOGUCHI Norimichi
RIKEN (The Institute of Physical and Chemical Research)
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YATABE Tohru
RIKEN (The Institute of Physical and Chemical Research)
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KAMATA Norihiko
Saitama University
関連論文
- 227nm AlGaN Light-Emitting Diode with 0.15mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
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- Realization of 340-nm-Band High-Output-Power (${>}7$ mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes