Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes

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2004-12-15

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Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
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Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates
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222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
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Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
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Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
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Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
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Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
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Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes

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