Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
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概要
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Optical gain is assessed for a green laser diode (LD) grown on a semipolar {202^^-1} GaN substrate. The estimated internal loss is 20±5/cm, and the maximum gain becomes saturated with the injection current, suggesting the existence of gain suppression mechanisms. The quantum confined Stark effect due to the pn junction, state filling, and screening of polarization-induced electric fields can explain shifts in the gain and the emission peaks with the injection current. The tail states in {202^^-1} LDs are much smaller than those in (0001) LDs, and are not the major cause of the gain suppression in {202^^-1} LDs, in contrast to (0001) LDs.
- 2011-11-10
著者
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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KANETA Akio
Department of Electronic Science and Engineering, Kyoto University
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Kim Yoon
Department Of Anesthesiology And Pain Medicine Chungnam National University Hospital
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kyono Takashi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kim Yoon
Department Of Electronic Science And Engineering Kyoto University
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