Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
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概要
- 論文の詳細を見る
- 2009-09-25
著者
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UENO Masaki
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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KATAYAMA Koji
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NAKAMURA Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Katayama Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Tokuyama Shinji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Akita Kimiya
Department Of Electrical And Electronic Engineering Muroran Institute Of Technology
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Adachi Masahiro
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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ENYA Yohei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Kyono Takashi
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-00
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Yoshizumi Yusuke
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-00
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Sumitomo Takamichi
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-00
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Akita Katsushi
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-00
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Ikegami Takatoshi
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-00
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Enya Yohei
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kyono Takashi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Akita Katsushi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Yoshizumi Yusuke
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Ikegami Takatoshi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Sumitomo Takamichi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
関連論文
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
- 531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
- Thermoelectric Properties of CeRu_4P_ and CeOs_4P_ with Filled Skutterudite-Type Structure
- Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ GaN Substrates
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
- Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
- Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
- High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
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- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes