High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates

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Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
227nm AlGaN Light-Emitting Diode with 0.15mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
227-261 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes Fabricated on High-quality AlN Buffer on Sapphire
Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
Contact Structure for a Superconducting Field Effect Transistor Using SrTiO_3/YBa_2Cu_3O_ Films
Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
Thermoelectric Properties of CeRu_4P_ and CeOs_4P_ with Filled Skutterudite-Type Structure
Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ GaN Substrates
Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
284-300nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates
Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates
Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser
Realization of 340-nm-Band High-Output-Power (${>}7$ mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes

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