Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates

概要

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Green laser diodes (LDs) on the $\{20\bar{2}1\}$ plane exhibit lower threshold current densities, nearly half of those on the $c$-plane in the green region between 520--530 nm. The threshold current of a typical $\{20\bar{2}1\}$ green LD lasing at 525.5 nm under room temperature cw operation is 51.1 mA, which corresponds to a threshold current density of 4.3 kA/cm2. The threshold voltage is 6.38 V. The characteristics temperature $T_{0}$ is measured to be 175 K. The perpendicular $\theta_{\bot}$ and parallel $\theta_{\|}$ beam divergence angles at half power of the $\{20\bar{2}1\}$ green LDs are 24 and 11°, respectively. From the viewpoint of the device characteristics, especially the threshold current density, we conclude that the green LDs on the $\{20\bar{2}1\}$ plane GaN substrates have the essential advantage for obtaining efficient green LDs.
2010-12-25