Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 2010-05-25
著者
-
Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
-
Kiyama Makoto
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
-
Kiyama Makoto
Sumitomo Electric Industries Ltd.
-
Katayama Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
-
NAKAMURA Takao
Sumitomo Electric Industries, Ltd.
-
Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
-
Nakata Ken
Sumitomo Electric Industries Ltd.
-
OKADA Masaya
Sumitomo Electric Industries, Ltd.
-
SAITOH Yu
Sumitomo Electric Industries, Ltd.
-
YOKOYAMA Mitsunori
Sumitomo Electric Industries, Ltd.
-
YAEGASSI Seiji
Sumitomo Electric Industries, Ltd.
-
KATAYAMA Koji
Sumitomo Electric Industries, Ltd.
-
UENO Masaki
Sumitomo Electric Industries, Ltd.
-
KATSUYAMA Tsukuru
Sumitomo Electric Industries, Ltd.
-
Yaegassi Seiji
Sumitomo Electric Industries Ltd.
-
Katsuyama Tsukuru
Sumitomo Electric Industries Ltd.
-
Okada Masaya
Sumitomo Electric Industries Ltd.
-
Saitoh Yu
Sumitomo Electric Industries Ltd.
-
Yokoyama Mitsunori
Sumitomo Electric Industries Ltd.
関連論文
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- Contact Structure for a Superconducting Field Effect Transistor Using SrTiO_3/YBa_2Cu_3O_ Films
- Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
- 531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
- Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
- Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates
- Thermoelastic Analysis of Slip Defect Generation on GaAs Wafers
- Characterization of Interface in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ GaN Substrates
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
- Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
- Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
- High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
- Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes