Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
スポンサーリンク
概要
- 論文の詳細を見る
A novel measurement technique for an X-ray absorption near-edge structure (XANES) for magnesium (Mg) doped in gallium nitride (GaN) has been developed. XANES spectra from Mg at very low concentrations of 1 \times 10^{18}/cm<sup>3</sup>doped in GaN have successfully been obtained by optimizing the region of interest (ROI) and by using highly brilliant synchrotron radiation X-rays of SPring-8. The ROI is the limited energy region from an X-ray fluorescence spectrum to elicit signals of particular atoms. Using this new technique, we have investigated the effect of the annealing process for Mg-doped GaN on the XANES spectra. It has been found that the XANES spectra of Mg significantly changed as the annealing temperature increased. This indicates that the local structure around Mg atoms in GaN was modified by the annealing process.
- 2013-12-25
著者
-
Iihara Junji
Sumitomo Electric Industries Ltd.
-
UENO Masaki
Sumitomo Electric Industries, Ltd.
-
Yonemura Takumi
Sumitomo Electric Industries, Ltd., Osaka 554-0024, Japan
-
Saito Yoshihiro
Sumitomo Electric Industries, Ltd., Osaka 554-0024, Japan
関連論文
- Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
- Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy
- Detection Limits of Trace Elements for Wavelength Dispersive Total X-Ray Fluorescence under High Flux Synchrotron Radiation
- Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
- Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN