Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-01-01
著者
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KIYAMA Makoto
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Kiyama Makoto
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Takebe Toshihiko
Semiconductor Materials R&d Department Itami Research Laboratories Sumitomo Electric Industries
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YOSHIDA Hiroaki
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, L
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KIYAMA Matoko
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, L
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FUJITA Keiichiro
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, L
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AKAI Shin-ichi
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, L
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Kiyama Matoko
Semiconductor Materials R&d Department Itami Research Laboratories Sumitomo Electric Industries
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Akai S
Semiconductor Materials R&d Department Itami Research Laboratories Sumitomo Electric Industries
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Akai Shin-ichi
Semiconductor Materials R&d Department Itami Research Laboratories Sumitomo Electric Industries
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Fujita K
Semiconductor Materials R&d Department Itami Research Laboratories Sumitomo Electric Industries
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FUJITA Keiichiro
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
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Kiyama Makoto
Semiconductor Materials R&D Department, Itami Research Laboratories, Sumitomo Electric Industries, Ltd.
関連論文
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
- Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates