Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-02-25
著者
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UENO Masaki
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NAKAMURA Takao
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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KANETA Akio
Department of Electronic Science and Engineering, Kyoto University
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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FUNATO Mitsuru
Department of Electronic Science and Engineering, Kyoto University
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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ENYA Yohei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NISHIZUKA Koji
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Nishizuka Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Enya Yohei
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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