Homoepitaxy and Photoluminescence Properties of (0001) AlN
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-08-25
著者
-
Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
-
Matsuda Kazuhisa
Department Of Anesthesiology Kyushu University Faculty Of Medicine
-
Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University
-
Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
-
ISHII Ryota
Department of Electronic Science and Engineering, Kyoto University
-
BANAL Ryan
Department of Electronic Science and Engineering, Kyoto University
関連論文
- Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells
- Estimation of Critical Thicknesses and Band Lineups in ZnCdSe/ZnSSe Strained-Layer System for Design of Carrier Confinement Quantum Well Structures
- Metalorganic Molecular Beam Epitaxy of Zn_Cd_xS_ySe_ Quaternary Alloys on GaAs Substrate
- On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
- Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
- Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
- Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
- Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH_4)_2S_x Solution
- Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
- Increase in the peripheral lymphocyte populations expressing CD54 (ICAM-1) after hyperthermic isolated limb perfusion in patients with malignant melanoma : an analysis of four cases
- Two Cases of Metastatic Malignant Melanoma of the Lower Limb Treated with Hyperthermic Isolated Limb Perfusion and Concomitant Infusion of Either Carboplatin or β-Interferon
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110)Surface Cleaved in Ultra High Vacuum (第37回真空に関する連合講演会プロシ-ディングス(1996年10月30日〜11月1日,大阪))
- (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
- Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
- Recombination Dynarmics in Zn_xCd_S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy
- Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
- Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
- Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
- Carrier Injection Characteristics in Diamine/ZnSe Organic-Inorganic Thin-Film Heterostructures for Blue Electroluminescence
- Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
- Kinetics of immunological parameters in patients with malignant melanoma treated with hyperthermic isolated limb perfusion
- Forward Scattered Sound Field by Parallel Cylinders : Ultrasonic Propagation and Field
- The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
- Elastic and Inelastic Collisions of 55 MeV Proton with ^4He
- Formation of an Atomically Flat Surface of ZnSe on GaAs(001) by Metalorganic Vapor Phase Epitaxy
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
- Properties of Ambient Air Aged Thin Porous Silicon
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe
- Structural Analysis of ZnSe-GaAs Quantum Wells
- Cubic ZnCdS Lattice-Matched to GaAs : A Novel Material for Short-Wavelength Optoelectronic Applications
- Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy
- Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
- Equation for Internal Quantum Efficiency and Its Temperature Dependence of Luminescence, and Application to InxGa1-xN/GaN Multiple Quantum Wells
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
- Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
- Homoepitaxy and Photoluminescence Properties of (0001) AlN
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Crack-Free Thick AlN Films Obtained by NH
- Homoepitaxy and Photoluminescence Properties of (0001) AlN
- Optical Gain Spectra of a (0001) InGaN Green Laser Diode
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)
- Effects of strong electron–hole exchange and exciton–phonon interactions on the exciton binding energy of aluminum nitride