Effects of strong electron–hole exchange and exciton–phonon interactions on the exciton binding energy of aluminum nitride

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概要

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• In this study, the exciton binding energies of AlN are calculated by the anisotropic effective mass theory, which considers the strong electron–hole exchange and Fröhlich-type exciton–phonon interactions. Our calculated results are in good agreement with recent experimental results, indicating that the electron–hole exchange and exciton–phonon interactions play essential roles in describing the excitonic structure of AlN. We estimate that the exciton binding energies of AlN are 53.7 and 67.3 meV, for the spin-singlet and the spin-triplet states, respectively. In addition, a universal correlation has been found in compound semiconductors including AlN, where the effect of the electron–hole exchange and Fröhlich-type exciton–phonon interactions almost compensates each other on the binding energy of a spin-singlet exciton.

• 2014-08-20

著者

• Ishii Ryota

  Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan

• Ishii Ryota

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.

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• Homoepitaxy and Photoluminescence Properties of (0001) AlN
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
• Homoepitaxy and Photoluminescence Properties of (0001) AlN
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)
• Effects of strong electron–hole exchange and exciton–phonon interactions on the exciton binding energy of aluminum nitride

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