Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
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概要
- 論文の詳細を見る
The optical properties of wurtzite AlN under large compressive strain are investigated by photoluminescence and optical reflectivity measurements with two different geometries. The AlN layer was coherently grown on 6H-SiC(0001), resulting in strains of \epsilon_{xx}=\epsilon_{yy}=-9.6\times 10^{-3} and \epsilon_{zz}=5.12\times 10^{-3}, as confirmed by high-resolution X-ray diffraction. Free exciton transitions were clearly observed. The transition energy of A free exciton (with \Gamma_{1} symmetry) was estimated to be 6.246 eV at 10 K. The large energy shift of the free exciton transition with respect to the transition in unstrained AlN was well explained by the reported deformation potentials of AlN.
- 2013-06-25
著者
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
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Suda Jun
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Funato Mitsuru
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ishii Ryota
Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kawakami Yoichi
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kaneko Mitsuaki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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