Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
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概要
- 論文の詳細を見る
The optical properties of InGaN-based green (512nm) laser structures fabricated on (0001) GaN substrates are investigated by means of photoluminescence and gain spectroscopies. It is demonstrated that in the state-of-the-art (0001) green InGaN quantum wells, potential fluctuations are drastically suppressed, and the internal loss is as low as 〜10/cm, both of which lead to a low threshold current density of 2.75kA/cm^2. The suppressed inhomogeneity also contributes to high linearity of gain increase with the injection current. The differential gain is relatively low, and is attributed to a low confinement factor in the longer wavelength spectral range.
- 一般社団法人電子情報通信学会の論文
- 2012-11-22
著者
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Kim Yoon
Department Of Anesthesiology And Pain Medicine Chungnam National University Hospital
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Opto-Electronics Products Division, Nichia Corp.
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Nagahama Shin-ichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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MIYOSHI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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