Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening
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概要
- 論文の詳細を見る
Polarization switching phenomena in semipolar ($11\bar{2}2$)-oriented InGaN quantum wells (QWs) were theoretically investigated by a newly formulated model considering the effect of In compositional fluctuation. The theoretical model successfully reproduced the reported polarization switching phenomena for both the emission wavelength and the excitation density in blue-green ($11\bar{2}2$) QWs, and this showed the importance of inhomogeneous broadening effects to understand polarization properties of semipolar quantum wells. Then, the model was applied for pure-green ($11\bar{2}2$) QWs, and we predicted that optical polarization was kept in the [$11\bar{2}\bar{3}$] direction up to the carrier density high enough to create population inversion in such long-wavelength QWs. These results support the possibility for semipolar-oriented pure green InGaN laser diodes with cleaved facet cavity mirrors.
- 2010-08-25
著者
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Noda Susumu
Department Of Electrical Engineering Kyoto University
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Funato Mitsuru
Department Of Electronic Science And Engineering Kyoto University
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Yamaguchi Atsushi
Research And Development Headquarters Rohm Co. Ltd.
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Yamaguchi Atsushi
Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Minato, Tokyo 105-0002, Japan
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Funato Mitsuru
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Kojima Kazunobu
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Noda Susumu
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Noda Susumu
Department of Electric Science and Engineering, Kyoto University
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