Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source

概要

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GaN, InN, and AlGaN were grown by metalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as a nitrogen source instead of ammonia. GaN with atomically flat surfaces and dislocation densities comparable to those in GaN grown with ammonia was obtained under a growth temperature of 925 °C and a V/III ratio of 25, which are much lower than those in ammonia-MOVPE. Carbon incorporation from the source precursors is avoidable in hydrogen growth ambients but is considerable in inert ambients. For InN, the (inert) N2 ambient also results in carbon-related deposits, while the H2 ambient enables InN to be grown but causes In segregation. For AlGaN, the entire Al solid composition can be attained by growth under atmospheric pressure at 925 °C. Although the edge dislocation density increases with increasing Al composition, the screw dislocation density is as low as a value on the order of $10^{6}$ cm-2. These findings strongly suggest that 1,1-DMHy is a promising alternative to ammonia for the growth of GaN and AlGaN but is rather unsuitable for the growth of In-containing alloys.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-10-15