High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
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概要
- 論文の詳細を見る
- 2012-08-25
著者
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Ueno Masaki
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Katayama Koji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Tokuyama Shinji
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Sumiyoshi Kazuhide
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Nakamura Takao
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Adachi Masahiro
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Enya Yohei
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Kyono Takashi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Yoshizumi Yusuke
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Ikegami Takatoshi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Sumitomo Takamichi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Ikeda Masao
Advanced Materials Laboratories Sony Corporation
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Saga Nobuhiro
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka 554-0022, Japan
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Yanashima Katsunori
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Nakajima Hiroshi
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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TASAI Kunihiko
Advanced Materials Laboratories, Sony Corporation
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NAGANUMA Kaori
Advanced Materials Laboratories, Sony Corporation
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KUMANO Tetsuya
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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TAKAGI Shimpei
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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YAMANAKA Yuichiro
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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TAKIGUCHI Yoshiro
Advanced Materials Laboratories, Sony Corporation
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FUUTAGAWA Noriyuki
Advanced Materials Laboratories, Sony Corporation
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HAMAGUCHI Tatsushi
Advanced Materials Laboratories, Sony Corporation
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Kyono Takashi
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
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NAKAJIMA Hiroshi
Advanced Materials Laboratories, Sony Corporation
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YANASHIMA Katsunori
Advanced Materials Laboratories, Sony Corporation
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SAGA Nobuhiro
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd.
関連論文
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates
- 531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
- Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates
- 10-W Peak-Power Picosecond Optical Pulse Generation from a Triple Section Blue-Violet Self-Pulsating Laser Diode
- Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates
- Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ GaN Substrates
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- High-Efficiency 352nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Volumetric Optical Recording Using a 400 nm All-Semiconductor Picosecond Laser
- Blue-Violet Bow-Tie Self-Pulsating Laser Diode with a Peak Power of 20 W and a Pulse Energy of 310 pJ
- Low Threshold Current Density InGaN Based 520--530 nm Green Laser Diodes on Semi-Polar $\{20\bar{2}1\}$ Free-Standing GaN Substrates
- Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode
- 300W Peak Power Picosecond Optical Pulse Generation by Blue-Violet GaInN Mode-Locked Laser Diode and Semiconductor Optical Amplifier
- High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (レーザ・量子エレクトロニクス)
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (電子デバイス)
- Optical gain spectra in semipolar {202^^-1} oriented green InGaN LDs in comparison with (0001) LDs
- Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a \{20\bar{2}1\} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
- High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs
- Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy
- Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs