300W Peak Power Picosecond Optical Pulse Generation by Blue-Violet GaInN Mode-Locked Laser Diode and Semiconductor Optical Amplifier
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概要
- 論文の詳細を見る
- 2012-02-25
著者
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Kono Shunsuke
New Industry Creation Hatchery Center (niche) Tohoku University
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KURAMOTO Masaru
Advanced Material Laboratories, Sony Corporation
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YOKOYAMA Hiroyuki
New Industry Creation Hatchery Center (NICHe), Tohoku University
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Yokoyama Hiroyuki
Kyushu Univ. Fukuoka Jpn
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Oki Tomoyuki
New Industry Creation Hatchery Center (niche) Tohoku University
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IKEDA Masao
Advanced Materials Laboratories, Sony Corporation
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Miyajima Takao
Advanced Material Laboratories Sony Corporation
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Watanabe Hideki
Advanced Material Laboratories Sony Corporation
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KODA Rintaro
Advanced Materials Laboratories, SONY Corporation
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OKI Tomoyuki
Advanced Materials Laboratories, SONY Corporation
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KONO Shunsuke
Advanced Materials Laboratories, SONY Corporation
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Koda Rintaro
Advanced Materials Laboratories Sony Corporation
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Yokoyama Hiroyuki
New Industry Creation Hatchery Center (niche) Tohoku University
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Ikeda Masao
Advanced Materials Laboratories Sony Corporation
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Oki Tomoyuki
Advanced Materials Laboratories Sony Corporation
関連論文
- Generation of over 10-W Peak-Power Picosecond Pulses by a Gain-Switched AlGaInN-Based Self-Pulsating Laser Diode
- Intensity autocorrelation measurement of 400 nm picosecond optical pulses from a GaInN mode-locked semiconductor laser diode using surface second harmonic generation of β-BaB2O4 crystal
- 10-W Peak-Power Picosecond Optical Pulse Generation from a Triple Section Blue-Violet Self-Pulsating Laser Diode
- Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber
- Optical Sampling System Using Compact and Stable External-Cavity Mode-Locked Laser-Diode Modules(Ultrafast Photonics)
- Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
- Volumetric Optical Recording Using a 400 nm All-Semiconductor Picosecond Laser
- Blue-Violet Bow-Tie Self-Pulsating Laser Diode with a Peak Power of 20 W and a Pulse Energy of 310 pJ
- Intensity Autocorrelation Measurement of 400 nm Picosecond Optical Pulses from a GaInN Mode-Locked Semiconductor Laser Diode Using Surface Second Harmonic Generation of $\beta$-BaB2O4 Crystal
- 300W Peak Power Picosecond Optical Pulse Generation by Blue-Violet GaInN Mode-Locked Laser Diode and Semiconductor Optical Amplifier
- High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
- Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers
- Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
- Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
- High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
- Nonlinear-Optic Silicon-Nanowire Waveguides
- Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
- Passively Mode-Locked GaInN Laser Diode Generating 200 fs Optical Pulses