Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers

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The effects of gain nonlinearities on gain-switched short-pulse-generation characteristics are analyzed via rate equations assuming a nonlinear-gain model including a gain saturation parameter g_{\text{s}} to quantitatively describe the strong gain-saturation nonlinearity in low-dimensional semiconductor lasers at high carrier densities. It was found that the minimum pulse width and the delay time are mainly determined by g_{\text{s}} rather than a differential gain coefficient g_{0} and a gain compression factor \varepsilon. By tracing the temporal evolution of carrier density, photon density, and material gain during gain switching, distinctly different effects of g_{\text{s}}, \varepsilon, and cavity lifetime \tau_{\text{p}} on pulse generation were clarified.
2012-09-25