Blue-Violet Bow-Tie Self-Pulsating Laser Diode with a Peak Power of 20 W and a Pulse Energy of 310 pJ
スポンサーリンク
概要
- 論文の詳細を見る
We generated single-transverse-mode optical pulses with a peak power of 20 W and a pulse energy of 310 pJ from a bow-tie self-pulsating GaN-based laser diode (SP-LD) under dc bias operation. Introducing the bow-tie structure, which has flared waveguides in both gain regions, increased the average output power and the optical pulse energy. An incorporation of the bow-tie structure resulted in an improved optical peak power that was twice that of a non tapered SP-LD.
- 2010-12-25
著者
-
Kono Shunsuke
New Industry Creation Hatchery Center (niche) Tohoku University
-
KURAMOTO Masaru
Advanced Material Laboratories, Sony Corporation
-
Watanabe Hideki
Advanced Material Laboratories Sony Corporation
-
Yokoyama Hiroyuki
New Industry Creation Hatchery Center (niche) Tohoku University
-
Ikeda Masao
Advanced Materials Laboratories Sony Corporation
-
Kono Shunsuke
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
-
Kuramoto Masaru
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Watanabe Hideki
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
関連論文
- Generation of over 10-W Peak-Power Picosecond Pulses by a Gain-Switched AlGaInN-Based Self-Pulsating Laser Diode
- Intensity autocorrelation measurement of 400 nm picosecond optical pulses from a GaInN mode-locked semiconductor laser diode using surface second harmonic generation of β-BaB2O4 crystal
- 10-W Peak-Power Picosecond Optical Pulse Generation from a Triple Section Blue-Violet Self-Pulsating Laser Diode
- Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber
- Optical Sampling System Using Compact and Stable External-Cavity Mode-Locked Laser-Diode Modules(Ultrafast Photonics)
- Volumetric Optical Recording Using a 400 nm All-Semiconductor Picosecond Laser
- Blue-Violet Bow-Tie Self-Pulsating Laser Diode with a Peak Power of 20 W and a Pulse Energy of 310 pJ
- Intensity Autocorrelation Measurement of 400 nm Picosecond Optical Pulses from a GaInN Mode-Locked Semiconductor Laser Diode Using Surface Second Harmonic Generation of $\beta$-BaB2O4 Crystal
- 300W Peak Power Picosecond Optical Pulse Generation by Blue-Violet GaInN Mode-Locked Laser Diode and Semiconductor Optical Amplifier
- High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
- Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers
- Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
- Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
- High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
- Nonlinear-Optic Silicon-Nanowire Waveguides
- Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
- Passively Mode-Locked GaInN Laser Diode Generating 200 fs Optical Pulses