Intensity Autocorrelation Measurement of 400 nm Picosecond Optical Pulses from a GaInN Mode-Locked Semiconductor Laser Diode Using Surface Second Harmonic Generation of $\beta$-BaB2O4 Crystal
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概要
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We developed an intensity autocorrelation measurement technique using the surface second harmonic generation (SHG) of a $\beta$-BaB2O4 crystal to characterize picosecond optical pulses at 402 nm from a GaInN mode-locked semiconductor laser diode (MLLD). This technique enabled us to precisely evaluate the pulse width at 402 nm, and the shortest pulse width of 1.6 ps was achieved from the GaInN MLLD operating under a reverse bias voltage of $-25$ V applied to a saturable absorber.
- 2010-12-25
著者
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Kono Shunsuke
New Industry Creation Hatchery Center (niche) Tohoku University
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Kuramoto Masaru
New Industry Creation Hatchery Center (niche) Tohoku University
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Ikeda Masao
New Industry Creation Hatchery Center (niche) Tohoku University
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Yokoyama Hiroyuki
New Industry Creation Hatchery Center (niche) Tohoku University
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Oki Tomoyuki
Advanced Materials Laboratories Sony Corporation
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Kono Shunsuke
New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aramaki-aza-aoba, Aoba-ku, Sendai 980-8579, Japan
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Yokoyama Hiroyuki
New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aramaki-aza-aoba, Aoba-ku, Sendai 980-8579, Japan
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Kuramoto Masaru
New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aramaki-aza-aoba, Aoba-ku, Sendai 980-8579, Japan
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Oki Tomoyuki
Advanced Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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