10-W Peak-Power Picosecond Optical Pulse Generation from a Triple Section Blue-Violet Self-Pulsating Laser Diode

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Generation of over 10-W Peak-Power Picosecond Pulses by a Gain-Switched AlGaInN-Based Self-Pulsating Laser Diode
10-W Peak-Power Picosecond Optical Pulse Generation from a Triple Section Blue-Violet Self-Pulsating Laser Diode
Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber
Optical Sampling System Using Compact and Stable External-Cavity Mode-Locked Laser-Diode Modules(Ultrafast Photonics)
Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
Volumetric Optical Recording Using a 400 nm All-Semiconductor Picosecond Laser
Blue-Violet Bow-Tie Self-Pulsating Laser Diode with a Peak Power of 20 W and a Pulse Energy of 310 pJ
Intensity Autocorrelation Measurement of 400 nm Picosecond Optical Pulses from a GaInN Mode-Locked Semiconductor Laser Diode Using Surface Second Harmonic Generation of $\beta$-BaB2O4 Crystal
300W Peak Power Picosecond Optical Pulse Generation by Blue-Violet GaInN Mode-Locked Laser Diode and Semiconductor Optical Amplifier
High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm
Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers
Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar \{20\bar{2}1\} GaN Substrates
Long-Lifetime True Green Laser Diodes with Output Power over 50mW above 525nm Grown on Semipolar {2021} GaN Substrates
High-Power (over 100mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530nm
Nonlinear-Optic Silicon-Nanowire Waveguides
Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture
Passively Mode-Locked GaInN Laser Diode Generating 200 fs Optical Pulses

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