Passively Mode-Locked GaInN Laser Diode Generating 200 fs Optical Pulses
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概要
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Femtosecond optical pulses with a duration of 200 fs were generated using a GaInN bisectional laser diode passively mode-locked in a dispersion-compensated external cavity with spectral filtering performed outside the cavity. The fact that the femtosecond pulses were obtained with a negative intracavity group-velocity dispersion and a saturable absorber recovery time of about 15 ps indicates that the mechanism involved was soliton mode-locking. The spectro-temporal investigation of the output pulses directly emitted after the mode-locked laser diode revealed that the spectral broadening was due to self-phase modulation in the gain section.
- 2013-08-25
著者
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KURAMOTO Masaru
Advanced Material Laboratories, Sony Corporation
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Miyajima Takao
Advanced Material Laboratories Sony Corporation
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Watanabe Hideki
Advanced Material Laboratories Sony Corporation
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KONO Shunsuke
Advanced Materials Laboratories, SONY Corporation
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Koda Rintaro
Advanced Materials Laboratories Sony Corporation
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Watanabe Hideki
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Kono Shunsuke
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Miyajima Takao
Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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- Passively Mode-Locked GaInN Laser Diode Generating 200 fs Optical Pulses