Characterization of Cleaved GaAs Tips for Scanning Tunneling Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
We have studied tunneling spectroscopy using cleaved n-type GaAs tips in a scanning tunneling microscope (STM) to characterize the electronic properties of the cleaved tips. The tunneling spectra were measured for a set of GaAs tips and metal surfaces and GaAs flat surfaces and metal tips. The spectra obtained for a GaAs tip and a metal surface are symmetrical for a bias voltage with narrower energy gaps, which are different from those with a GaAs flat surface and a metal tip. This result indicates a stronger pinning of the surface Fermi level at midgap in the cleaved GaAs tips than that in the GaAs flat surface. This characteristic is also confirmed by photoresponse measurements in the STM.
- 社団法人応用物理学会の論文
- 1997-11-15
著者
-
YOSHITA Masahiro
Institute for Solid State Physics, University of Tokyo
-
TAKAHASHI Takuji
Research Center for Advanced Science and Technology, University of Tokyo
-
Yoshita M
Univ. Tokyo Kashiwa
-
Yoshita Masahiro
Institute For Solid State Physics The University Of Tokyo
-
Takahashi Takuji
Research Center For Advanced Science And Technology University Of Tokyo
関連論文
- Improved High Collection Efficiency in Fluorescence Microscopy With a Weierstrass-Sphere Solid Immersion Lens : Instrumantation, Measurement, and Fabrication,Technology
- Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells
- Application of Solid Immersion Lens to High-Resolution Photoluminescenee Imaging of Patterned GaAs Quantum Wells
- Kelvin Probe Force Microscopy on InAs Thin Films on (110) GaAs Substrates
- Fabrication of Thin Films Using a Soluble Metal Phthalocyanine Salt and Their Photoconductive Properties
- Formation of Flat Monolayer-Step-Free (110) GaAs Surfaces by Growth Interruption Annealing during Cleaved-Edge Epitaxial Overgrowth : Semiconductors
- Photoinduced Current Properties of InAs-covered GaAs Studied by Scanning Tunneling Microscopy
- Polarization Dependence of the Optical Interband Transition Defined by the Spatial Variation of the Valence p-Orbital Bloch Functions in Quantum
- Characterization of Cleaved GaAs Tips for Scanning Tunneling Microscopy
- Measurements of Cavity-Length-Dependent Internal Differential Quantum Efficiency and Internal Optical Loss in Laser Diodes
- Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers
- Fano-Resonance Gain by Dephasing Electron--Hole Cooper Pairs in Semiconductors
- Waveguide Two-Point Differential-Excitation Method for Quantitative Absorption Measurements of Nanostructures
- Robust Carrier-Induced Suppression of Peak Gain Inherent to Quantum-Wire Lasers
- Optical Detection of Electron-Depletion Region Surrounding Metal Electrode on a Dilute Two-Dimensional Electron Gas
- Measurements of Gain Spectra over Wide Spectral Ranges in GaInAsP/InP Multiple-Quantum-Well Laser Diodes
- Fluorescent Radiation Thermometry at Cryogenic Temperatures Based on Detailed Balance Relation
- Double-Core-Slab-Waveguide Semiconductor Lasers for End Optical Pumping
- Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
- Low-Threshold Current-Injection Single-Mode Lasing in T-shaped GaAs/AlGaAs Quantum Wires
- Fluorescent Radiation Thermometry at Cryogenic Temperatures Based on Detailed Balance Relation