Fano-Resonance Gain by Dephasing Electron--Hole Cooper Pairs in Semiconductors
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概要
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A genuine many-body feature in semiconductor lasers is theoretically found in the gain spectra when a BCS-type (Bardeen--Cooper--Schrieffer) electron--hole (eh) pairing instability occurs during low-temperature operation. Owing to the finite dephasing time of eh pairs, an ultranarrow Fano-resonance gain between a bound eh pair and a continuum of unbound (plasma-like) eh pairs is found close to the phase-transition point. As a result, single-mode laser operation is strongly modified relative to the conventional laser operation using the Lorentzian-type eh plasma gain. Sharp Fano-resonance gain occurs owing to the Hopf bifurcation in the poles of the optical susceptibility.
- 2012-09-15
著者
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Yamaguchi Makoto
Department of Architecture, Faculty of Engineering, Nippon Bunri University, Japan.
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Yoshita Masahiro
Institute For Solid State Physics The University Of Tokyo
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Akiyama Hidefumi
Institute For Solid State Physics University Of Tokyo
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Ogawa Tetsuo
Department Of Anatomy I Showa University School Of Medicine
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Kamide Kenji
Department Of Education Kumamoto University
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Akiyama Hidefumi
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Kamide Kenji
Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan
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