Polarization Dependence of the Optical Interband Transition Defined by the Spatial Variation of the Valence p-Orbital Bloch Functions in Quantum
スポンサーリンク
概要
- 論文の詳細を見る
We develop a method to express wave functions of hole states in semiconductor quantum wire (QWR) structures based on spatial variation of the valenceρ-orbital Bloch functions, to show how envelope wave functions relate to polarization-dependent interband transition. A wave function of a hole state is obtained solving the Schrodinger equation based on the 4 × 4 Luttinger Hamiltonian, and then recomposed by means of six bases of threeρ-orbital Bloch functions with two spin components. As a result, the hole wave function is expressed by six envelope wave functions for the six bases. Then, interband optical transition matrix elements with x-, y-, and z-polarizations are separately given by overlap integrals between envelope wave functions of holes for ρ_x, ρ_y, and ρ_z orbitals and those of electrons. We also calculate the wave functions for a modeled ridge QWR structure with mirror symmetry as well as for an asymmetric structure, and discuss the polarization dependence of the optical transition.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
-
Koshiba Shyun
Institute For Solid State Physics University Of Tokyo
-
Yoshita Masahiro
Institute For Solid State Physics The University Of Tokyo
-
Akiyama Hidefumi
Institute For Solid State Physics University Of Tokyo
-
WATANABE Shinichi
Institute for Solid State Physics, University of Tokyo
-
Watanabe Shinichi
Institute For Solid State Physics University Of Tokyo
-
Watanabe Shinich
Institute for Solid State Physics, University of Tokyo
関連論文
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
- Improved High Collection Efficiency in Fluorescence Microscopy With a Weierstrass-Sphere Solid Immersion Lens : Instrumantation, Measurement, and Fabrication,Technology
- Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells
- Application of Solid Immersion Lens to High-Resolution Photoluminescenee Imaging of Patterned GaAs Quantum Wells
- Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Coherent Dynamics of Excitons in an Island-Inserted GaAs/AlAs Quantum Well Structure : Suppression of Phase Relaxation and a Deep Quantum Beat
- Fabrication of Thin Films Using a Soluble Metal Phthalocyanine Salt and Their Photoconductive Properties
- Formation of Flat Monolayer-Step-Free (110) GaAs Surfaces by Growth Interruption Annealing during Cleaved-Edge Epitaxial Overgrowth : Semiconductors
- Growth and characteristics of GaNAs/GaAs MQW by molecular beam epitaxy
- Optimization of Well Width and of N Composition on Optical Properties for GaNAs/GaAs MQW grown by RF-MBE
- The Effect of As_2 and As_4 Molecule Beam Species on MBE Grown GaN_xAs_/GaAs MQW by Modulated N Radical Beam Source
- Polarization Dependence of the Optical Interband Transition Defined by the Spatial Variation of the Valence p-Orbital Bloch Functions in Quantum
- Characterization of Cleaved GaAs Tips for Scanning Tunneling Microscopy
- pH-Dependent Fluorescence Spectra, Lifetimes, and Quantum Yields of Firefly-Luciferin Aqueous Solutions Studied by Selective-Excitation Fluorescence Spectroscopy
- Measurements of Cavity-Length-Dependent Internal Differential Quantum Efficiency and Internal Optical Loss in Laser Diodes
- Analysis of Gain-Switching Characteristics Including Strong Gain Saturation Effects in Low-Dimensional Semiconductor Lasers
- Fano-Resonance Gain by Dephasing Electron--Hole Cooper Pairs in Semiconductors
- Waveguide Two-Point Differential-Excitation Method for Quantitative Absorption Measurements of Nanostructures
- Robust Carrier-Induced Suppression of Peak Gain Inherent to Quantum-Wire Lasers
- Optimization of Well Width and N Content for Optical Properties of GaNAs/GaAs Multiple Quantum Well Grown by RF-Molecular Beam Epitaxy
- Growth of GaNAs/GaAs Multiple Quantum Well by Molecular Beam Epitaxy Using Modulated N Radical Beam Source
- Coulomb Enhancement and Suppression of Peak Gain in Quantum Wire Lasers
- Optical Detection of Electron-Depletion Region Surrounding Metal Electrode on a Dilute Two-Dimensional Electron Gas
- Novel Electroluminescence Properties of Thin Films Using Soluble Metallophthalocyanine Salts
- Measurements of Gain Spectra over Wide Spectral Ranges in GaInAsP/InP Multiple-Quantum-Well Laser Diodes
- Fluorescent Radiation Thermometry at Cryogenic Temperatures Based on Detailed Balance Relation
- Double-Core-Slab-Waveguide Semiconductor Lasers for End Optical Pumping
- Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
- Low-Threshold Current-Injection Single-Mode Lasing in T-shaped GaAs/AlGaAs Quantum Wires
- Fluorescent Radiation Thermometry at Cryogenic Temperatures Based on Detailed Balance Relation