Formation of Flat Monolayer-Step-Free (110) GaAs Surfaces by Growth Interruption Annealing during Cleaved-Edge Epitaxial Overgrowth : Semiconductors

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概要

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• We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs layers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (110) GaAs surface, and find that a high temperature growth interruption and anneal remarkably improves the surface morphology of the (110) GaAs layer. Interruption of the 490℃ epitaxial GaAs growth by a 10 minute anneal at 600℃ under an As_4 overpressure produces an atomically-flat surface free of monolayer step edges over areas measuring several tens ofμm on a side. These results suggest that the (110) GaAs surface has much higher stability under annealing conditions than under MBE growth conditions.

• 社団法人応用物理学会の論文
• 2001-03-15

著者

• AKIYAMA Hidefumi

  Institute for Solid State Physics, The University of Tokyo

• YOSHITA Masahiro

  Institute for Solid State Physics, University of Tokyo

• West Ken

  Bell Laboratories Lucent Technologies

• Pfeiffer Loren

  Bell Laboratories Lucent Technologies

• Yoshita Masahiro

  Institute For Solid State Physics University Of Tokyo

• Yoshita Masahiro

  Institute For Solid State Physics The University Of Tokyo

• Akiyama Hidefumi

  Institute For Solid State Physics University Of Tokyo

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