Pfeiffer Loren | Bell Laboratories Lucent Technologies
スポンサーリンク
概要
関連著者
-
West Ken
Bell Laboratories Lucent Technologies
-
Pfeiffer Loren
Bell Laboratories Lucent Technologies
-
Yoshita Masahiro
Institute For Solid State Physics The University Of Tokyo
-
Akiyama Hidefumi
Institute For Solid State Physics University Of Tokyo
-
Ihara Toshiyuki
Institute for Solid State Physics, University of Tokyo, and CREST, JST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
-
AKIYAMA Hidefumi
Institute for Solid State Physics, The University of Tokyo
-
YOSHITA Masahiro
Institute for Solid State Physics, University of Tokyo
-
Yoshita Masahiro
Institute For Solid State Physics University Of Tokyo
-
Pfeiffer Loren
Bell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
-
Okano Makoto
Institute for Solid State Physics, University of Tokyo, and CREST, JST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
-
West Ken
Bell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
-
Akiyama Hidefumi
Institute for Solid State Physics, University of Tokyo, and CREST, JST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
-
Baldwin Kirk
Bell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, Murray Hill, New Jersey 07974, U.S.A.
-
Liu Shu-man
Institute for Solid State Physics, University of Tokyo, and CREST, Japan Science and Technology Agency, Kashiwa, Chiba 277-8581, Japan
-
Itoh Hirotake
Institute for Solid State Physics, University of Tokyo, and CREST, Japan Science and Technology Agency, Kashiwa, Chiba 277-8581, Japan
-
Pfeiffer Loren
Bell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, Murray Hill, New Jersey 07974, U.S.A.
-
West Ken
Bell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, Murray Hill, New Jersey 07974, U.S.A.
-
Okano Makoto
Institute for Solid State Physics, University of Tokyo, and CREST, Japan Science and Technology Agency, Kashiwa, Chiba 277-8581, Japan
-
Okano Makoto
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
著作論文
- Formation of Flat Monolayer-Step-Free (110) GaAs Surfaces by Growth Interruption Annealing during Cleaved-Edge Epitaxial Overgrowth : Semiconductors
- Optical Detection of Electron-Depletion Region Surrounding Metal Electrode on a Dilute Two-Dimensional Electron Gas
- Low-Threshold Current-Injection Single-Mode Lasing in T-shaped GaAs/AlGaAs Quantum Wires