Measurements of Gain Spectra over Wide Spectral Ranges in GaInAsP/InP Multiple-Quantum-Well Laser Diodes

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概要

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• Gain spectra of 1500-nm-wavelength GaInAsP/InP multiple-quantum-well (MQW) laser diodes were obtained over wide wavelength and injection current ranges. To cover wide spectral ranges, we combined gain spectra derived from amplified spontaneous emission (ASE) spectra and white-light transmittance spectra. In addition, gain (absorption) spectra for very low injection currents were obtained through ASE measurements using a liquid-nitrogen-cooled InGaAs photodiode array detector with high sensitivity. From these gain spectra, accurate estimations of the material gain and carrier-density-dependent internal loss as well as the material-transparency current were obtained.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-01-25

著者

• ZHANG Liming

  Bell Labs

• Yoshita Masahiro

  Institute For Solid State Physics The University Of Tokyo

• Akiyama Hidefumi

  Institute For Solid State Physics University Of Tokyo

• Inada Satoshi

  Institute for Solid State Physics, University of Tokyo, and CREST, JST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Akiyama Hidefumi

  Institute for Solid State Physics, University of Tokyo, and CREST, JST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Kinoshita Moto

  Institute for Solid State Physics, University of Tokyo, and CREST, JST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Zhang Liming

  Bell Laboratories, Alcatel Lucent, 791 Holmdel-Keyport Road, Holmdel, NJ 07733, U.S.A.

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