Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs

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概要

• 論文の詳細を見る
• 2012-11-25

著者

• Yoshita Masahiro

  Institute For Solid State Physics The University Of Tokyo

• Akiyama Hidefumi

  Institute For Solid State Physics University Of Tokyo

• Onabe Kentaro

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Kuboya Shigeyuki

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• YAGI Shuhei

  Graduate School of Science and Engineering, Saitama University

• TAKAMIYA Kengo

  Graduate School of Science and Engineering, Saitama University

• YAGUCHI Hiroyuki

  Graduate School of Science and Engineering, Saitama University

• KATAYAMA Ryuji

  Institute for Materials Research, Tohoku University

• FUKUSHIMA Toshiyuki

  Graduate School of Science and Engineering, Saitama University

• HIJIKATA Yasuto

  Graduate School of Science and Engineering, Saitama University

• MOCHIZUKI Toshimitsu

  Institute for Solid State Physics, The University of Tokyo

• ONABE Kentaro

  Department of Advanced Materials Science, The University of Tokyo

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